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J-GLOBAL ID:200902080002947850   Reference number:89A0404354

Advanced self-alignment process technique with very thick sidewall for high speed GaAs LSIs.

厚いサイドウォールを持つ高速GaAs LSI用の進んだ自己整合プロセス技術
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Volume: 1988  Page: 700-703  Publication year: 1988 
JST Material Number: C0829B  ISSN: 0163-1918  Document type: Proceedings
Article type: 原著論文  Country of issue: United States (USA)  Language: ENGLISH (EN)
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Transistors 
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