High electron mobility GaN/Al<sub>x</sub>Ga<sub>1-x</sub>N heterostructures grown by low-pressure metalorganic chemical vapor deposition.

KHAN M A; VAN HOVE J M; KUZIA J N; OLSON D T

Art

J-GLOBAL ID：200902085076054514 Reference number：91A0570942

High electron mobility GaN/Al_xGa_1-xN heterostructures grown by low-pressure metalorganic chemical vapor deposition.

低圧金属有機化学気相堆積で成長した高電子移動度GaN/Al_xGa_1-xNヘテロ構造

Publisher site Copy service {{ this.onShowCLink("http://jdream3.com/copy/?sid=JGLOBAL&noSystem=1&documentNoArray=91A0570942&COPY=1") }}
Access JDreamⅢ for advanced search and analysis. {{ this.onShowJLink("http://jdream3.com/lp/jglobal/index.html?docNo=91A0570942&from=J-GLOBAL&jstjournalNo=H0613A") }}

Author (4)： , , ,
Material：
Volume： 58 Issue： 21 Page： 2408-2410 Publication year： May. 27, 1991
JST Material Number： H0613A ISSN： 0003-6951 CODEN： APPLAB Document type： Article
Article type：短報 Country of issue： United States (USA) Language： ENGLISH (EN)

,...

To see more with JDream III (charged). {{ this.onShowAbsJLink("http://jdream3.com/lp/jglobal/index.html?docNo=91A0570942&from=J-GLOBAL&jstjournalNo=H0613A") }}

半導体-半導体接触【’81~’92】

, , , , , ,

Return to Previous Page

High electron mobility GaN/AlxGa1-xN heterostructures grown by low-pressure metalorganic chemical vapor deposition.

High electron mobility GaN/Al_xGa_1-xN heterostructures grown by low-pressure metalorganic chemical vapor deposition.