Art
J-GLOBAL ID：200902089871974945   Reference number：92A0363443

Buried oxie layers formed by low-dose oxygen implantation.

低線量酸素注入により形成した埋め込み酸化物層
Author (2)：
NAKASHIMA S

About NAKASHIMA S

(Nippon Telegraph and Telephone Corp., Atsugi-shi, JPN)

About Nippon Telegraph and Telephone Corp., Atsugi-shi, JPN

, 
IZUMI K

About IZUMI K

(Nippon Telegraph and Telephone Corp., Atsugi-shi, JPN)

About Nippon Telegraph and Telephone Corp., Atsugi-shi, JPN


Material：
Journal of Materials Research  (J Mater Res)

About Journal of Materials Research


Volume： 7  Issue： 4  Page： 788-790  Publication year： Apr. 1992 
JST Material Number： D0987B  ISSN： 0884-2914  CODEN： JMREEE  Document type： Article
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)
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silicon

About silicon

,...
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JST classification (3)：
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金属-絶縁体-半導体構造【’81~’92】 
(BM03074V)

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,  Irradiational changes semiconductors 
(BK16123E)

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,  Materials of solid-state devices 
(NC03020K)

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Terms in the title (4)：
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低線量

About 低線量

, 
酸素注入

About 酸素注入

, 
埋め込み

About 埋め込み

, 
酸化物層

About 酸化物層


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