Limiting thickness h<sub>epi</sub> for epitaxial growth and room-temperature Si growth on Si(100).

EAGLESHAM D J; GOSSMANN H-J; CERULLO M

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J-GLOBAL ID：200902090407509316 Reference number：90A0854219

Limiting thickness h_epi for epitaxial growth and room-temperature Si growth on Si(100).

Si(100)上の室温Si成長とエピタキシャル成長に対する限界膜厚h_epi

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Author (3)： , ,
Material：
Volume： 65 Issue： 10 Page： 1227-1230 Publication year： Sep. 03, 1990
JST Material Number： H0070A ISSN： 0031-9007 CODEN： PRLTAO Document type： Article
Article type：短報 Country of issue： United States (USA) Language： ENGLISH (EN)

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Semiconductor thin films

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Limiting thickness hepi for epitaxial growth and room-temperature Si growth on Si(100).

Limiting thickness h_epi for epitaxial growth and room-temperature Si growth on Si(100).