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J-GLOBAL ID：200902093342855105   Reference number：93A0068251

GaN, AlN, and InN: A review.

GaN,AlNおよびInN レビュー
Author (2)：
STRITE S

About STRITE S

(Univ. Illinois at Urbana-Champaign, Illinois)

About Univ. Illinois at Urbana-Champaign, Illinois

, 
MORKOC H

About MORKOC H

(Univ. Illinois at Urbana-Champaign, Illinois)

About Univ. Illinois at Urbana-Champaign, Illinois


Material：
Journal of Vacuum Science & Technology. B. Microelectronics and Nanometer Structures  (Journal of Vacuum Science & Technology. B. Microelectronics Processing and Phenomena)

About Journal of Vacuum Science & Technology. B. Microelectronics and Nanometer Structures


Volume： 10  Issue： 4  Page： 1237-1266  Publication year： Jul. 1992 
JST Material Number： E0974A  ISSN： 1071-1023  CODEN： JVTBD9  Document type： Article
Article type： 文献レビュー  Country of issue： United States (USA)  Language： ENGLISH (EN)
Thesaurus term：
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Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
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gallium nitride

About gallium nitride

,...
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JST classification (2)：
JST classification
Category name(code) classified by JST.
Thin films of other inorganic compounds 
(BK14060A)

About Thin films of other inorganic compounds

,  Materials of solid-state devices 
(NC03020K)

About Materials of solid-state devices

Terms in the title (4)：
Terms in the title
Keywords automatically extracted from the title.
GaN

About GaN

, 
AlN

About AlN

, 
InN

About InN

, 
レビュー

About レビュー


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