Electrical resistivity and structural changes in amorphous Ge<sub>1-x</sub>Al<sub>x</sub> thin films under thermal annealing.

CATALINA F; AFONSO C N; ORTIZ C

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J-GLOBAL ID：200902098461695290 Reference number：89A0318918

Electrical resistivity and structural changes in amorphous Ge_1-xAl_x thin films under thermal annealing.

熱アニールによる非晶質Ge_1-xAl_x薄膜の電気抵抗率と構造の変化

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Volume： 167 Page： 57-65 Publication year： Dec. 15, 1988
JST Material Number： B0899A ISSN： 0040-6090 Document type： Article
Article type：原著論文 Country of issue： Netherlands (NLD) Language： ENGLISH (EN)

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Electronic conduction in amorphous and liquid metals , Metallic thin films

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Electrical resistivity and structural changes in amorphous Ge1-xAlx thin films under thermal annealing.

Electrical resistivity and structural changes in amorphous Ge_1-xAl_x thin films under thermal annealing.