Art
J-GLOBAL ID：200902101464135190
Reference number：01A1028394
Improvement in Electrical Properties of 4H-SiC Epilayers by Micropipe Dissociaon.
ミクロパイプ分解による4H-SiCエピ層の電気特性の向上
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Author (4)：
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Material：
Volume：
40
Issue：
10A
Page：
L1012-L1014
Publication year：
Oct. 01, 2001
JST Material Number：
F0599B
ISSN：
0021-4922
Document type：
Article
Article type：
短報
Country of issue：
Japan (JPN)
Language：
ENGLISH (EN)
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Keywords indexed to the article.
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JST classification (2)：
JST classification
Category name(code) classified by JST.
Lattice defects in semiconductors
, Diodes
Reference (10)：
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1) Y. Sugawara, D. Takayama, K. Asano, R. Singh, J. Palmour and T. Hayashi: <I>Proc. Int. Symp. Power Semiconductor Devices & ICs</I> (Inst. Electr. Eng. Jpn., Osaka, 2001) p. 27.
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2) D. Peters, K. O. Dohnke, C. Hecht and D. Stephani: Mater. Sci. Forum 353-356 (2001) 675.
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3) P. G. Neudeck and J. A. Powell: IEEE Electron Device Lett. 15 (1994) 63.
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4) Q. Wahab, A. Ellison, C. Hallin, A. Henry, J. Di Persio, R. Martinez and E. Janzen: Mater. Sci. Forum 338-342 (2000) 1175.
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5) A. O. Konstantinov, Q. Wahab, N. Nordell and U. Lindefelt: J. Electron. Mater. 27 (1998) 335.
ｍore...
Terms in the title (5)：
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