Direct Growth of GaN on Al<sub>2</sub>O<sub>3</sub>(0001) by Two-Flow Metalorganic Vapor Phase Epitaxy.

NATSUME ARATA; MORIMOTO KEIZO; INOUE NAOHISA

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J-GLOBAL ID：200902101691894978 Reference number：00A0976581

Direct Growth of GaN on Al₂O₃(0001) by Two-Flow Metalorganic Vapor Phase Epitaxy.

ツーフロー型有機金属気相成長法によるAl₂O₃(0001)基板上へのGaN直接成長

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Material：
Volume： 43 Issue： 9 Page： 897-899 Publication year： Sep. 20, 2000
JST Material Number： G0194A ISSN： 0559-8516 CODEN： SHINA Document type： Article
Article type：短報 Country of issue： Japan (JPN) Language： JAPANESE (JA)

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Semiconductor thin films

Reference (1)：

NAKAMURA, S. The Blue Laser Diode. 1997

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Direct Growth of GaN on Al2O3(0001) by Two-Flow Metalorganic Vapor Phase Epitaxy.

Direct Growth of GaN on Al₂O₃(0001) by Two-Flow Metalorganic Vapor Phase Epitaxy.