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Art
J-GLOBAL ID:200902101691894978   Reference number:00A0976581

Direct Growth of GaN on Al2O3(0001) by Two-Flow Metalorganic Vapor Phase Epitaxy.

ツーフロー型有機金属気相成長法によるAl2O3(0001)基板上へのGaN直接成長
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Material:
Volume: 43  Issue:Page: 897-899  Publication year: Sep. 20, 2000
JST Material Number: G0194A  ISSN: 0559-8516  CODEN: SHINA  Document type: Article
Article type: 短報  Country of issue: Japan (JPN)  Language: JAPANESE (JA)
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Semiconductor thin films 
Reference (1):
  • NAKAMURA, S. The Blue Laser Diode. 1997
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