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J-GLOBAL ID:200902103040281318   Reference number:98A0782728

Effects of Substrate on the Growth Characteristics of Silicon Oxide Films Deposited by Atmospheric Pressure Chemical Vapor Deposition Using Si(OC2H5)4 and O3.

Si(OC2H5)4とO3を用いる大気圧化学蒸着で析出させた酸化けい素膜の成長特性に及ぼす基板の影響
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Material:
Volume: 145  Issue:Page: 2847-2853  Publication year: Aug. 1998 
JST Material Number: C0285A  ISSN: 1945-7111  CODEN: JESOAN  Document type: Article
Article type: 原著論文  Country of issue: United States (USA)  Language: ENGLISH (EN)
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Oxide thin films 
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