1.3-μm CW Lasing of InGaAs-GaAs Quantum Dots at Room Temperature with a Threshold Current of 8 mA.

MUKAI K; NAKATA Y; OTSUBO K; SUGAWARA M; YOKOYAMA N; ISHIKAWA H

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J-GLOBAL ID：200902103316649799 Reference number：99A0976908

1.3-μm CW Lasing of InGaAs-GaAs Quantum Dots at Room Temperature with a Threshold Current of 8 mA.

InGaAs-GaAs量子ドットの,しきい値電流8mAでの1.3μm CW室温レーザ発振

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Material：
Volume： 11 Issue： 10 Page： 1205-1207 Publication year： Oct. 1999
JST Material Number： T0721A ISSN： 1041-1135 CODEN： IPTLEL Document type： Article
Article type：短報 Country of issue： United States (USA) Language： ENGLISH (EN)

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Semiconductor lasers

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