Characterization of atomic-layer-deposited silicon nitride/SiO<sub>2</sub> stacked gate dielectrics for highly reliable p-metal-oxide-semiconductor field-effect transistors.

NAKAJIMA A; YOSHIMOTO T; KIDERA T; OBATA K; YOKOYAMA S; SUNAMI H; HIROSE M

Art

J-GLOBAL ID：200902103338212335 Reference number：01A0872944

Characterization of atomic-layer-deposited silicon nitride/SiO₂ stacked gate dielectrics for highly reliable p-metal-oxide-semiconductor field-effect transistors.

高信頼性p型金属-酸化物-半導体電界効果トランジスタ用の原子層堆積した窒化けい素/SiO₂積層ゲート誘電体の特性評価

Publisher site Copy service {{ this.onShowCLink("http://jdream3.com/copy/?sid=JGLOBAL&noSystem=1&documentNoArray=01A0872944&COPY=1") }}
Access JDreamⅢ for advanced search and analysis. {{ this.onShowJLink("http://jdream3.com/lp/jglobal/index.html?docNo=01A0872944&from=J-GLOBAL&jstjournalNo=E0974A") }}

Author (7)： , , , , , ,
Material：
Volume： 19 Issue： 4 Page： 1138-1143 Publication year： Jul. 2001
JST Material Number： E0974A ISSN： 1071-1023 CODEN： JVTBD9 Document type： Article
Article type：原著論文 Country of issue： United States (USA) Language： ENGLISH (EN)

,...

To see more with JDream III (charged). {{ this.onShowAbsJLink("http://jdream3.com/lp/jglobal/index.html?docNo=01A0872944&from=J-GLOBAL&jstjournalNo=E0974A") }}

Metal-insulator-semiconductor structures , Thin films of other inorganic compounds

, , , , , , ,

Return to Previous Page

Characterization of atomic-layer-deposited silicon nitride/SiO2 stacked gate dielectrics for highly reliable p-metal-oxide-semiconductor field-effect transistors.

Characterization of atomic-layer-deposited silicon nitride/SiO₂ stacked gate dielectrics for highly reliable p-metal-oxide-semiconductor field-effect transistors.