Art
J-GLOBAL ID：200902103900045013
Reference number：01A0279294
Pressure-Controlled Solution Growth of Bulk GaN Crystals under High Pressure.
高圧下でのバルクGaN結晶の圧力制御された融液成長
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Author (6)：
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Material：
Volume：
223
Issue：
1
Page：
15-27
Publication year：
Jan. 01, 2001
JST Material Number：
C0599A
ISSN：
0370-1972
Document type：
Article
Article type：
原著論文
Country of issue：
Germany, Federal Republic of (DEU)
Language：
ENGLISH (EN)
Thesaurus term：
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
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Semi thesaurus term：
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.
JST classification (1)：
JST classification
Category name(code) classified by JST.
Crystal growth of semiconductors
Terms in the title (6)：
Terms in the title
Keywords automatically extracted from the title.
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