Electronic defects induced in p- and n-type silicon by SF<sub>6</sub> plasma etching.

BELKACEM A; ARNAL Y; CHANTRE A; POMOT C

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J-GLOBAL ID：200902104121602093 Reference number：93A0660292

Electronic defects induced in p- and n-type silicon by SF₆ plasma etching.

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Author (4)： , , ,
Material：
Volume： 11 Issue： 3 Page： 709-716 Publication year： May. 1993
JST Material Number： E0974A ISSN： 1071-1023 CODEN： JVTBD9 Document type： Article
Country of issue： United States (USA) Language： ENGLISH (EN)

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Electronic defects induced in p- and n-type silicon by SF6 plasma etching.

Electronic defects induced in p- and n-type silicon by SF₆ plasma etching.