Art
J-GLOBAL ID：200902107022676432   Reference number：96A0169145

Plasma passivation of etch-induced surface damage on GaAs.

GaAs上のエッチ誘起表面参照のプラズマ不動態化
Author (2)：
KO K K

About KO K K

(Univ. Michigan, Michigan)

About Univ. Michigan, Michigan

, 
PANG S W

About PANG S W

(Univ. Michigan, Michigan)

About Univ. Michigan, Michigan


Material：
Journal of Vacuum Science & Technology. B. Microelectronics and Nanometer Structures  (Journal of Vacuum Science & Technology. B. Microelectronics Processing and Phenomena)

About Journal of Vacuum Science & Technology. B. Microelectronics and Nanometer Structures


Volume： 13  Issue： 6  Page： 2376-2380  Publication year： Nov. 1995 
JST Material Number： E0974A  ISSN： 1071-1023  CODEN： JVTBD9  Document type： Article
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)
Thesaurus term：
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
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gallium arsenide

About gallium arsenide

,...
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JST classification (1)：
JST classification
Category name(code) classified by JST.
Manufacturing technology of solid-state devices 
(NC03030V)

About Manufacturing technology of solid-state devices

Terms in the title (6)：
Terms in the title
Keywords automatically extracted from the title.
GaAs

About GaAs

, 
エッチ

About エッチ

, 
誘起

About 誘起

, 
参照

About 参照

, 
プラズマ

About プラズマ

, 
不動態化

About 不動態化


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