InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrate.

NAKAMURA S; SENOH M; NAGAHAMA S; IWASA N; YAMADA T; MATSUSHITA T; KIYOKU H; SUGIMOTO Y; CHOCHO K

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J-GLOBAL ID：200902107902966766 Reference number：98A0198261

InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrate.

横方向にエピタキシャルに上層を成長させたGaN基板上に成長させた変調ドープ歪層を持つInGaN/GaN/AlGaN構造のレーザダイオード

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Author (9)： , , , , , , , ,
Material：
Volume： 72 Issue： 2 Page： 211-213 Publication year： Jan. 12, 1998
JST Material Number： H0613A ISSN： 0003-6951 CODEN： APPLAB Document type： Article
Article type：短報 Country of issue： United States (USA) Language： ENGLISH (EN)

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Semiconductor lasers

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