Art
J-GLOBAL ID：200902108059712494   Reference number：99A0657899

Wafer junction by the surface activity method in the ordinary temperature of silicon and lithium niobate.

表面活性化法によるシリコンとニオブ酸リチウムの常温ウェハ接合
Author (1)：
TAKAGI HIDEKI

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(機械技研)

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Material：
機械研News  (機械研ニュース)

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Issue： 5  Page： 4-6  Publication year： 1999 
JST Material Number： G0033A  ISSN： 0286-2271  Document type： Article
Article type： 解説  Country of issue： Japan (JPN)  Language： JAPANESE (JA)
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*wafer

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,...
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JST classification (1)：
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Manufacturing technology of solid-state devices 
(NC03030V)

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Terms in the title (5)：
Terms in the title
Keywords automatically extracted from the title.
活性化法

About 活性化法

, 
シリコン

About シリコン

, 
ニオブ酸リチウム

About ニオブ酸リチウム

, 
常温

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, 
ウェハ

About ウェハ


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