Art
J-GLOBAL ID：200902109102280150
Reference number：02A0642849
Gate-Induced Drain Leakage Currents in Metal Oxide Semiconductor Field Effect Transistors with High-κ Dielectric.
高κ誘電体の金属酸化物半導体電界効果トランジスタにおけるゲート誘起のドレインリーク電流
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Author (3)：
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Material：
Volume：
41
Issue：
7A
Page：
4432-4435
Publication year：
Jul. 15, 2002
JST Material Number：
G0520B
ISSN：
0021-4922
Document type：
Article
Article type：
原著論文
Country of issue：
Japan (JPN)
Language：
ENGLISH (EN)
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JST classification (1)：
JST classification
Category name(code) classified by JST.
Transistors
Reference (4)：
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1) S. Tiwari, J. J. Welser and P. M. Solomon: IEDM, 1998, p. 737.
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2) S. J. Lee, H. F. Luan, W. P. Bai, C. H. Lee, T. S. Jeon, Y. Senzaki, D. Roberts and D. L. Kwong: IEDM, 2000, p. 31.
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3) L. Kang, K. Onishi, Y. Jeon, B. Lee, C. Kang, W. J. Qi, R. Nieh, S. Gopalan, R. Choi and J. C. Lee: IEDM, 2000, p. 35.
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4) C. G. F. Yeap, S. Krishnan and M. R. Lin: Electron. Lett. 34 (1998) 1150.
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