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J-GLOBAL ID:200902109901712690   Reference number:95A0722365

In situ fabrication of self-aligned InGaAs quantum dots on GaAs multiatomic steps by metalorganic chemical vapor deposition.

有機金属化学蒸着によるGaAs多原子ステップへの自己整列InGaAs量子ドットのその場作製
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Material:
Volume: 66  Issue: 26  Page: 3663-3665  Publication year: Jun. 26, 1995 
JST Material Number: H0613A  ISSN: 0003-6951  CODEN: APPLAB  Document type: Article
Article type: 短報  Country of issue: United States (USA)  Language: ENGLISH (EN)
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Semiconductor thin films  ,  Semiconductor-semiconductor contacts with Gr.13-15 element compounds 

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