Art
J-GLOBAL ID：200902110893327780   Reference number：96A0082988

Preparation of diamond heteroepitaxial film on Si substrate.

Si基板上でのダイヤモンドヘテロエピタキシャル膜の作製
Author (3)：
SUESADA TSUYOSHI

About SUESADA TSUYOSHI

(早稲田大 理工)

About 早稲田大 理工

, 
NAKAMURA NAOFUMI

About NAKAMURA NAOFUMI

(早稲田大 理工)

About 早稲田大 理工

, 
KAWARADA HIROSHI

About KAWARADA HIROSHI

(早稲田大 理工)

About 早稲田大 理工


Material：
New Diamond  (ニューダイヤモンド)

About New Diamond


Volume： 11  Issue： 2  Page： 13-20  Publication year： Apr. 1995 
JST Material Number： X0341A  ISSN： 1340-4792  Document type： Article
Article type： 解説  Country of issue： Japan (JPN)  Language： JAPANESE (JA)
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epitaxy

About epitaxy

,...
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Thesaurus term/Semi thesaurus term
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diamond film

About diamond film

,...
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JST classification (2)：
JST classification
Category name(code) classified by JST.
Carbon and its compounds 
(YB02060D)

About Carbon and its compounds

,  Techniques and equipment of crystal growth 
(BK13020B)

About Techniques and equipment of crystal growth

Terms in the title (2)：
Terms in the title
Keywords automatically extracted from the title.
Si基板

About Si基板

, 
作製

About 作製


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