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J-GLOBAL ID:200902111479171732   Reference number:97A0013155

Dependence of effective carrier lifetime in iron-doped silicon crystals on the carrier injection level.

鉄をドープしたシリコン結晶における有効キャリア寿命のキャリア注入量依存性
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Volume: 11  Issue: 11  Page: 1713-1717  Publication year: Nov. 1996 
JST Material Number: E0503B  ISSN: 0268-1242  CODEN: SSTEET  Document type: Article
Article type: 原著論文  Country of issue: United Kingdom (GBR)  Language: ENGLISH (EN)
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Electric conduction in crystalline semiconductors 
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