Art
J-GLOBAL ID:200902111479171732
Reference number:97A0013155
Dependence of effective carrier lifetime in iron-doped silicon crystals on the carrier injection level.
鉄をドープしたシリコン結晶における有効キャリア寿命のキャリア注入量依存性
-
Publisher site
Copy service
{{ this.onShowCLink("http://jdream3.com/copy/?sid=JGLOBAL&noSystem=1&documentNoArray=97A0013155©=1") }}
-
Access JDreamⅢ for advanced search and analysis.
{{ this.onShowJLink("http://jdream3.com/lp/jglobal/index.html?docNo=97A0013155&from=J-GLOBAL&jstjournalNo=E0503B") }}
Author (1):
Material:
Volume:
11
Issue:
11
Page:
1713-1717
Publication year:
Nov. 1996
JST Material Number:
E0503B
ISSN:
0268-1242
CODEN:
SSTEET
Document type:
Article
Article type:
原著論文
Country of issue:
United Kingdom (GBR)
Language:
ENGLISH (EN)
Thesaurus term:
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.
,...
JST classification (1):
JST classification
Category name(code) classified by JST.
Electric conduction in crystalline semiconductors
Terms in the title (5):
Terms in the title
Keywords automatically extracted from the title.
,
,
,
,
Return to Previous Page