Fabrication of a New Si Field Emitter Tip with Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) Structure.

HIRANO T; KANEMARU S; TANOUE H; ITOH J

Art

J-GLOBAL ID：200902112637865174 Reference number：97A0262658

Fabrication of a New Si Field Emitter Tip with Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) Structure.

金属-酸化物-半導体電界効果トランジスタ(MOSFET)構造を持つ新しいSi電界エミッタチップの製作

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Material：
Volume： 35 Issue： 12B Page： 6637-6640 Publication year： Dec. 1996
JST Material Number： G0520B ISSN： 0021-4922 Document type： Article
Article type：原著論文 Country of issue： Japan (JPN) Language： ENGLISH (EN)

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Other solid-state devices , Electron and ion sources

Reference (11)：

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YOKOO, K. J.Vac.Sci.& Technol. 1995, B13, 491

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