Characterization by medium energy ion scattering of damage and dopant profiles produced by ultrashallow B and As implants into Si at different temperatures.

VAN DEN BERG J A; ARMOUR D G; ZHANG S; WANG T-S; CULLIS A G; COLLART E H J; GOLDBERG R D; BAILEY P; NOAKES T C Q

Art

J-GLOBAL ID：200902112920901691 Reference number：02A0597199

Characterization by medium energy ion scattering of damage and dopant profiles produced by ultrashallow B and As implants into Si at different temperatures.

種々の温度でのSi中への超浅B及びAs注入により生じた損傷及びドーパントプロフィルの中間エネルギーイオン散乱による評価

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Material：
Volume： 20 Issue： 3 Page： 974-983 Publication year： May. 2002
JST Material Number： E0974A ISSN： 1071-1023 CODEN： JVTBD9 Document type： Article
Article type：原著論文 Country of issue： United States (USA) Language： ENGLISH (EN)

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Irradiational changes semiconductors , Lattice defects in semiconductors

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