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J-GLOBAL ID：200902112962788151   Reference number：96A0286525

Ultra-Large-Scale Step-Free Terraces Formed at the Bottom of Craters on Vicinal Si(111) Surfaces.

微斜面Si(111)表面上のクレータの底における超大規模なステップフリーテラスの形成
Author (3)：
HOMMA Y

About HOMMA Y

(NTT Interdisciplinary Res. Lab., Tokyo, JPN)

About NTT Interdisciplinary Res. Lab., Tokyo, JPN

, 
AIZAWA N

About AIZAWA N

(Tokyo Gakugei Univ., Tokyo, JPN)

About Tokyo Gakugei Univ., Tokyo, JPN

, 
OGINO T

About OGINO T

(NTT Basic Res. Lab., Kanagawa, JPN)

About NTT Basic Res. Lab., Kanagawa, JPN


Material：
Japanese Journal of Applied Physics. Part 2. Letters  (Japanese Journal of Applied Physics. Part 2. Letters & Express Letters)

About Japanese Journal of Applied Physics. Part 2. Letters


Volume： 35  Issue： 2B  Page： L241-L243  Publication year： Feb. 15, 1996 
JST Material Number： F0599B  ISSN： 0021-4922  Document type： Article
Article type： 短報  Country of issue： Japan (JPN)  Language： ENGLISH (EN)
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silicon

About silicon

,...
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JST classification (1)：
JST classification
Category name(code) classified by JST.
Surface structure of semiconductors 
(BK15030A)

About Surface structure of semiconductors

Terms in the title (5)：
Terms in the title
Keywords automatically extracted from the title.
微斜面

About 微斜面

, 
Si

About Si

, 
クレータ

About クレータ

, 
大規模

About 大規模

, 
テラス

About テラス


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