Art
J-GLOBAL ID：200902113520617877   Reference number：99A0283768

Oscillation Effects in IGBT’s Related to Negative Capacitance Phenomena.

負のキャパシタンス現象に関連したIGBTにおける発振効果
Author (3)：
OMURA I

About OMURA I

(Toshiba Corp., Kawasaki, JPN)

About Toshiba Corp., Kawasaki, JPN

, 
FICHTNER W

About FICHTNER W

(Swiss Federal Inst. Technol., Zuerich, CHE)

About Swiss Federal Inst. Technol., Zuerich, CHE

, 
OHASHI H

About OHASHI H

(Toshiba Corp., Kawasaki, JPN)

About Toshiba Corp., Kawasaki, JPN


Material：
IEEE Transactions on Electron Devices  (IEEE Trans Electron Devices)

About IEEE Transactions on Electron Devices


Volume： 46  Issue： 1  Page： 237-244  Publication year： Jan. 1999 
JST Material Number： C0222A  ISSN： 0018-9383  CODEN： IETDAI  Document type： Article
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)
Thesaurus term：
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
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*IGBT

About IGBT

,...
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JST classification (1)：
JST classification
Category name(code) classified by JST.
Transistors 
(NC03070N)

About Transistors

Terms in the title (3)：
Terms in the title
Keywords automatically extracted from the title.
キャパシタンス

About キャパシタンス

, 
現象

About 現象

, 
IGBT

About IGBT


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