Extremely large N content (up to 10%) in GaNAs grown by gas-source molecular beam epitaxy.

KONDOW M; UOMI K; KITATANI T; WATAHIKI S; YAZAWA Y

Art

J-GLOBAL ID：200902114392094080 Reference number：96A0708519

Extremely large N content (up to 10%) in GaNAs grown by gas-source molecular beam epitaxy.

ガス原料分子ビームエピタクシーによって成長させたGaNAs中の極めて大きいN含有量(最高10%)

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Author (5)： , , , ,
Material：
Volume： 164 Issue： 1/4 Page： 175-179 Publication year： Jul. 1996
JST Material Number： B0942A ISSN： 0022-0248 Document type： Article
Article type：原著論文 Country of issue： Netherlands (NLD) Language： ENGLISH (EN)

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Semiconductor thin films

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