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J-GLOBAL ID：200902114459691151   Reference number：93A0405339

The study of the preparation conditions for obtaining stoichiometric As3Se2 films.

化学量論的なAs2Se3薄膜の作成条件の検討
Author (2)：
BANDO TSUTOMU

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(石川工高専)

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, 
OKANO SHUICHI

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(石川工高専)

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Material：
石川工業高等専門学校紀要  (Memoirs of National Institute of Technology, Ishikawa College)

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Issue： 25  Page： 33-38  Publication year： Mar. 1993 
JST Material Number： S0861A  ISSN： 0286-6110  Document type： Article
Article type： 原著論文  Country of issue： Japan (JPN)  Language： JAPANESE (JA)
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arsenic selenide

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,...
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Semiconductor thin films 
(BK14040E)

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Terms in the title (2)：
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化学量論

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, 
薄膜

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