Dislocation reduction in GaN thin films via lateral overgrowth from trenches.

CHEN Y; SCHNEIDER R; WANG S Y; KERN R S; CHEN C H; KUO C P

Art

J-GLOBAL ID：200902114568855989 Reference number：99A0966207

Dislocation reduction in GaN thin films via lateral overgrowth from trenches.

トレンチからの横方向被覆成長によるGaN薄膜中の転位の減少

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Author (6)： , , , , ,
Material：
Volume： 75 Issue： 14 Page： 2062-2063 Publication year： Oct. 04, 1999
JST Material Number： H0613A ISSN： 0003-6951 CODEN： APPLAB Document type： Article
Article type：短報 Country of issue： United States (USA) Language： ENGLISH (EN)

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Semiconductor thin films

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