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J-GLOBAL ID：200902116067885287
Reference number：98A0833152
Characterization of CuInS2 Thin Films Grown by Close-spaced Vapor Sulfurization of Co-sputtered Cu-In Alloy Precursors.Cu-In alloy films were prepared on bare or Mo-coated glass by co-sputtering from Cu and In targets at ambient temperature.
Coを共スパッタさせたCu-In合金前駆体の狭い空間内の蒸気硫化によって成長させたCuInS2薄膜の特性評価
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Author (5)：
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Material：
Volume：
37
Issue：
8
Page：
4248-4253
Publication year：
Aug. 1998
JST Material Number：
G0520B
ISSN：
0021-4922
Document type：
Article
Article type：
原著論文
Country of issue：
Japan (JPN)
Language：
ENGLISH (EN)
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JST classification (1)：
JST classification
Category name(code) classified by JST.
Semiconductor thin films
Reference (31)：
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SUN, Y. J. Vac. Sci. Technol. 1978, 15, 265
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SHAY, J. L. Ternary Chalcopyrite Semiconductors: Growth, Electronics Properties and Applications. 1975, 118
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OGAWA, Y. Jpn. J. Appl. Phys. 1994, 33, L1775
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WALTER, T. Proc. 12th EC Photovoltaic Solar Energy Conf. 1994, 1775
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ZWEIGART, S. Conf. Proc. 1st World Conf. PV. 1994, 60
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