Art
J-GLOBAL ID：200902117213594261   Reference number：95A0324155

High dislocation densities in high efficiency GaN-based light-emitting diodes.

高効率GaN基発光ダイオードにおける高転位密度
Author (4)：
LESTER S D

About LESTER S D

(Hewlett Packard Lab., California)

About Hewlett Packard Lab., California

, 
PONCE F A

About PONCE F A

(Xerox Palo Alto Research Center, California)

About Xerox Palo Alto Research Center, California

, 
CRAFORD M G

About CRAFORD M G

(Hewlett Packard Co., California)

About Hewlett Packard Co., California

, 
STEIGERWALD D A

About STEIGERWALD D A

(Hewlett Packard Co., California)

About Hewlett Packard Co., California


Material：
Applied Physics Letters  (Appl Phys Lett)

About Applied Physics Letters


Volume： 66  Issue： 10  Page： 1249-1251  Publication year： Mar. 06, 1995 
JST Material Number： H0613A  ISSN： 0003-6951  CODEN： APPLAB  Document type： Article
Article type： 短報  Country of issue： United States (USA)  Language： ENGLISH (EN)
Thesaurus term：
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All keywords is available on JDreamIII(charged).
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gallium nitride

About gallium nitride

,...
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JST classification (1)：
JST classification
Category name(code) classified by JST.
Light emitting devices 
(NC03082G)

About Light emitting devices

Terms in the title (4)：
Terms in the title
Keywords automatically extracted from the title.
高効率

About 高効率

, 
GaN

About GaN

, 
発光ダイオード

About 発光ダイオード

, 
転位密度

About 転位密度


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