Art
J-GLOBAL ID：200902119677794070   Reference number：93A0950201

The Physics of Macropore Formation in Low Doped n-Type Silicon.

低ドープn型シリコン中のマクロ孔生成の物理学
Author (1)：
LEHMANN V

About LEHMANN V

(Siemens AG, Muenchen, DEU)

About Siemens AG, Muenchen, DEU


Material：
Journal of the Electrochemical Society  (J Electrochem Soc)

About Journal of the Electrochemical Society


Volume： 140  Issue： 10  Page： 2836-2843  Publication year： Oct. 1993 
JST Material Number： C0285A  ISSN： 1945-7111  CODEN： JESOAN  Document type： Article
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)
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silicon

About silicon

,...
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JST classification (2)：
JST classification
Category name(code) classified by JST.
Electrochemical reaction 
(CB07050F)

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,  Materials of solid-state devices 
(NC03020K)

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Terms in the title (4)：
Terms in the title
Keywords automatically extracted from the title.
ドープ

About ドープ

, 
N型シリコン

About N型シリコン

, 
孔生成

About 孔生成

, 
物理学

About 物理学


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