Art
J-GLOBAL ID：200902120758980747   Reference number：97A0624086

Phosphorus and boron implantation in 6H-SiC.

6H-SiCへのりんとほう素の注入
Author (7)：
RAO M V

About RAO M V

(George Mason Univ., Virginia)

About George Mason Univ., Virginia

, 
GARDNER J A

About GARDNER J A

(George Mason Univ., Virginia)

About George Mason Univ., Virginia

, 
CHI P H

About CHI P H

(National Inst. Standards and Technol., Maryland)

About National Inst. Standards and Technol., Maryland

, 
HOLLAND O W

About HOLLAND O W

(Oak Ridge National Lab., Tennessee)

About Oak Ridge National Lab., Tennessee

, 
KELNER G

About KELNER G

(Naval Res. Lab., Washington, DC)

About Naval Res. Lab., Washington, DC

, 
KRETCHMER J

About KRETCHMER J

(G.E. Corporate Res. and Dev., New York)

About G.E. Corporate Res. and Dev., New York

, 
GHEZZO M

About GHEZZO M

(G.E. Corporate Res. and Dev., New York)

About G.E. Corporate Res. and Dev., New York


Material：
Journal of Applied Physics  (Journal of General Physics and its Application to Other Sciences and to Industry)

About Journal of Applied Physics


Volume： 81  Issue： 10  Page： 6635-6641  Publication year： May. 15, 1997 
JST Material Number： C0266A  ISSN： 0021-8979  CODEN： JAPIAU  Document type： Article
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)
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silicon carbide

About silicon carbide

,...
Semi thesaurus term：
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.
アニール

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JST classification (1)：
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Lattice defects in semiconductors 
(BK12040Q)

About Lattice defects in semiconductors

Terms in the title (3)：
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6H-SiC

About 6H-SiC

, 
ほう素

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, 
注入

About 注入


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