Art

J-GLOBAL ID：200902122351324511   Reference number：01A0486750

Behavior of Thermally Induced Defects in Heavily Boron-Doped Silicon Crystals.

高濃度ほう素ドープシリコン結晶における熱誘起欠陥の挙動

Author (5)： KIM J-M (LG Siltron Inc., Kyung-Buk, KOR) ,  CHOI J-Y (LG Siltron Inc., Kyung-Buk, KOR) ,  CHO H-J (LG Siltron Inc., Kyung-Buk, KOR) ,  LEE H-W (LG Siltron Inc., Kyung-Buk, KOR) ,  YOO H-D (LG Siltron Inc., Kyung-Buk, KOR)
Material： Japanese Journal of Applied Physics. Part 1. Regular Papers, Short Notes & Review Papers  (Japanese Journal of Applied Physics. Part 1. Regular Papers, Brief Communications & Review Papers)
Volume： 40  Issue： 3A  Page： 1370-1374  Publication year： Mar. 15, 2001 
JST Material Number： G0520B  ISSN： 0021-4922  Document type： Article
Article type： 原著論文  Country of issue： Japan (JPN)  Language： ENGLISH (EN)

Thesaurus term： *silicon ,...

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JST classification (1)： Lattice defects in semiconductors  (BK12040Q)

Reference (17)：

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• 2) E. Dornberger, D. Graf, M. Suhren, U. Lambert, P. Wagner, F. Dupret and W. von Ammon: J. Cryst. Growth 180 (1997) 343.
• 3) M. Suhren, D. Graf, U. Lambert and P. Wagner: Electrochem. Soc. Proc. 96-13 (1996) 132.
• 4) H. Tsuya, Y. Kondo and M. Kanamori: Jpn. J. Appl. Phys. 22 (1983) 16.
• 5) S. Matsumoto, I. Ishihara, H. Kaneko, H. Harada and T. Abe: Appl. Phys. Lett. 46 (1985) 957.

Terms in the title (7)： 高濃度 ,  ほう素 ,  ドープ ,  シリコン結晶 ,  誘起 ,  欠陥 ,  挙動