Art
J-GLOBAL ID：200902122372104040   Reference number：99A0737653

SOI bipolar-MOS merged transistors for BiCMOS application.

BiCMOS応用向けのSOI・バイポーラMOS合体構造トランジスタ
Author (2)：
ZHENG Y-S

About ZHENG Y-S

(Kyushu Inst. Technol., Fukuoka, JPN)

About Kyushu Inst. Technol., Fukuoka, JPN

, 
ASANO T

About ASANO T

(Kyushu Inst. Technol., Fukuoka, JPN)

About Kyushu Inst. Technol., Fukuoka, JPN


Material：
Electronics Letters  (Electron Lett)

About Electronics Letters


Volume： 35  Issue： 14  Page： 1203-1204  Publication year： Jul. 08, 1999 
JST Material Number： A0887A  ISSN： 0013-5194  CODEN： ELLEAK  Document type： Article
Article type： 短報  Country of issue： United Kingdom (GBR)  Language： ENGLISH (EN)
Thesaurus term：
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Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
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BiCMOS

About BiCMOS

,...
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JST classification (1)：
JST classification
Category name(code) classified by JST.
Transistors 
(NC03070N)

About Transistors

Terms in the title (7)：
Terms in the title
Keywords automatically extracted from the title.
BiCMOS

About BiCMOS

, 
応用

About 応用

, 
SOI

About SOI

, 
バイポーラ

About バイポーラ

, 
MOS

About MOS

, 
合体

About 合体

, 
トランジスタ

About トランジスタ


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