A Mechanism of 13% Lattice Expansion in C<sub>60</sub> FCC(110) Thin Films Grown on the GaAs(001) As-rich Surface.

OHNO K; LI Z-Q; KAMIYAMA H; KAWAZOE Y; XUE Q; HASHIZUME T; HASEGAWA Y; SHINOHARA H; SAKURAI T

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J-GLOBAL ID：200902123110342728 Reference number：97A0431560

A Mechanism of 13% Lattice Expansion in C₆₀ FCC(110) Thin Films Grown on the GaAs(001) As-rich Surface.

GaAs(001)ひ素リッチ表面上に成長したC₆₀FCC(110)薄膜中の13%格子膨張の機構

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Volume： 43 Issue： 1 Page： 61-65 Publication year： Mar. 1997
JST Material Number： F0995A ISSN： 0040-8808 CODEN： SRTAA Document type： Article
Article type：原著論文 Country of issue： Japan (JPN) Language： ENGLISH (EN)

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A Mechanism of 13% Lattice Expansion in C60 FCC(110) Thin Films Grown on the GaAs(001) As-rich Surface.

A Mechanism of 13% Lattice Expansion in C₆₀ FCC(110) Thin Films Grown on the GaAs(001) As-rich Surface.