First-principles molecular-dynamics calculations and STM observations of dissociative adsorption of Cl<sub>2</sub> and F<sub>2</sub> on Si(001) surface.

OKADA H; INAGAKI K; GOTO H; ENDO K; HIROSE K; MORI Y

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J-GLOBAL ID：200902123620237929 Reference number：02A0765154

First-principles molecular-dynamics calculations and STM observations of dissociative adsorption of Cl₂ and F₂ on Si(001) surface.

Si(001)表面におけるCl₂とF₂の解離吸着の第一原理分子動力学計算とSTM観察

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Author (6)： , , , , ,
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Volume： 515 Issue： 2/3 Page： 287-295 Publication year： Sep. 01, 2002
JST Material Number： C0129B ISSN： 0039-6028 Document type： Article
Article type：原著論文 Country of issue： Netherlands (NLD) Language： ENGLISH (EN)

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Study of adsorption by physical means

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First-principles molecular-dynamics calculations and STM observations of dissociative adsorption of Cl2 and F2 on Si(001) surface.

First-principles molecular-dynamics calculations and STM observations of dissociative adsorption of Cl₂ and F₂ on Si(001) surface.