Substrate orientation dependence of lateral composition modulation in (GaP)<sub>n</sub>(InP)<sub>n</sub> strained short period superlattices grown by gas source MBE.

KIM S J; ASAHI H; ASAMI K; ISHIBASHI T; GONDA S

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J-GLOBAL ID：200902124368917896 Reference number：96A0622081

Substrate orientation dependence of lateral composition modulation in (GaP)_n(InP)_n strained short period superlattices grown by gas source MBE.

気体原料MBEにより成長させた(GaP)_n(InP)_n歪短周期超格子における横方向組成変調の基板方位依存性

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Author (5)： , , , ,
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Issue： 145 Page： 91-96 Publication year： 1996
JST Material Number： E0403B ISSN： 0305-2346 CODEN： IPHSAC Document type： Proceedings
Article type：原著論文 Country of issue： United Kingdom (GBR) Language： ENGLISH (EN)

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Semiconductor thin films , Luminescence of semiconductors

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Substrate orientation dependence of lateral composition modulation in (GaP)n(InP)n strained short period superlattices grown by gas source MBE.

Substrate orientation dependence of lateral composition modulation in (GaP)_n(InP)_n strained short period superlattices grown by gas source MBE.