Art
J-GLOBAL ID：200902124871028268
Reference number：99A0497792
First Demonstration of Rectifying Property of P-I-N Heterojunctions Fabricated by Tri-Layered Semiconducting Oxides.
3層化半導性酸化物によって作製したp-i-nヘテロ接合整流特性の最初の実現
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Author (5)：
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Material：
Volume：
38
Issue：
4B
Page：
2675-2678
Publication year：
Apr. 30, 1999
JST Material Number：
G0520B
ISSN：
0021-4922
Document type：
Article
Article type：
原著論文
Country of issue：
Japan (JPN)
Language：
ENGLISH (EN)
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JST classification (2)：
JST classification
Category name(code) classified by JST.
Semiconductor-semiconductor contacts without Gr.13-15 element compounds
, Diodes
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