Electroluminescence and Avalanche Multiplication at Electric Field Strength Exceeding 1 MV/cm in Hydrogenated Amorphous SiC Alloy.

TOYAMA T; MATSUI T; HIRATSUKA K; OKAMOTO H; HAMAKAWA Y

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J-GLOBAL ID：200902125144671081 Reference number：97A0173571

Electroluminescence and Avalanche Multiplication at Electric Field Strength Exceeding 1 MV/cm in Hydrogenated Amorphous SiC Alloy.

水素化非晶質SiCアロイにおける1MV/cm以上の電場強度におけるエレクトロルミネセンスとなだれ増倍

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Material：
Volume： 35 Issue： 12A Page： 5975-5979 Publication year： Dec. 1996
JST Material Number： G0520B ISSN： 0021-4922 Document type： Article
Article type：原著論文 Country of issue： Japan (JPN) Language： ENGLISH (EN)

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Luminescence of semiconductors , Light emitting devices

Reference (14)：

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TOYAMA, T. J.Appl.Phys. 1995, 77, 6354
HAMAKAWA, Y. Current Topics in Amorphous Materials Physics and Technology. 1993, 301
CODY, G. D. Semiconductors and Semimetals. 1984, 21, 11
HAMAKAWA, Y. Proc.16th IEEE Photovoltaic Specialists Conf. 1982, 679

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