High etch rates of GaN with magnetron reactive ion etching in BCl<sub>3</sub> plasmas.

MCLANE G F; CASAS L; PEARTON S J; ABERNATHY C R

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J-GLOBAL ID：200902125875049738 Reference number：95A0627448

High etch rates of GaN with magnetron reactive ion etching in BCl₃ plasmas.

BCl₃プラズマ中でのマグネトロン反応性イオンエッチングによるGaNの高エッチ速度

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Author (4)： , , ,
Material：
Volume： 66 Issue： 24 Page： 3328-3330 Publication year： Jun. 12, 1995
JST Material Number： H0613A ISSN： 0003-6951 CODEN： APPLAB Document type： Article
Article type：短報 Country of issue： United States (USA) Language： ENGLISH (EN)

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High etch rates of GaN with magnetron reactive ion etching in BCl3 plasmas.

High etch rates of GaN with magnetron reactive ion etching in BCl₃ plasmas.