Amber InGaN-Based Light-Emitting Diodes Operable at High Ambient Temperatures.

MUKAI T; NARIMATSU H; NAKAMURA S

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J-GLOBAL ID：200902125880685359 Reference number：98A0605256

Amber InGaN-Based Light-Emitting Diodes Operable at High Ambient Temperatures.

高い周囲温度で動作可能なこはく色のInGaN発光ダイオード

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Material：
Volume： 37 Issue： 5A Page： L479-L481 Publication year： May. 01, 1998
JST Material Number： F0599B ISSN： 0021-4922 Document type： Article
Article type：短報 Country of issue： Japan (JPN) Language： ENGLISH (EN)

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Light emitting devices

Reference (9)：

1) For a review, see S. Nakamura and G. Fasol: The Blue Laser Diode (Springer-Verlag, Heidelberg, 1997) 1st ed.
2) S. Nakamura, M. Senoh, N. Iwasa, S. Nagahama, T. Yamada and T. Mukai: Jpn. J. Appl. Phys. 34 (1995) L1332
3) T. Mukai, D. Morita and S. Nakamura: Proc. 2nd Int. Conf. Nitride Semiconductors, Tokushima, Oct. 27-31, 1997, LN-9.
4) S. Nakamura, M. Senoh, N. Iwasa and S. Nagahama: Jpn. J. Appl. Phys. 34 (1995) L797
5) F. A. Kish and R. M. Fletcher: AlInGaP Light-Emitting Diodes, eds. G. B. Stringfellow and M. G. Craford (Academic Press, San Diego, 1997) Semiconductors and Semimetals Vol. 48, Chap. 5, p. 149.

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