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J-GLOBAL ID:200902126386569768   Reference number:00A0835559

Anti-Surfactant in III-Nitride Epitaxy. Quantum Dot Formation and Dislocation Termination.

III族窒化物エピタクシーにおけるアンチサーファクタント 量子ドット形成と転位の終端
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Volume: 39  Issue: 8B  Page: L831-L834  Publication year: Aug. 15, 2000 
JST Material Number: F0599B  ISSN: 0021-4922  Document type: Article
Article type: 短報  Country of issue: Japan (JPN)  Language: ENGLISH (EN)
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Semiconductor thin films  ,  Lattice defects in semiconductors 
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