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J-GLOBAL ID：200902126932743286   Reference number：98A0240619

Ultraviolet and violet GaN light emitting diodes on silicon.

シリコン上の紫外線と紫色のGaN発光ダイオード
Author (2)：
GUHA S

About GUHA S

(IBM T.J. Watson Res. Center, New York)

About IBM T.J. Watson Res. Center, New York

, 
BOJARCZUK N A

About BOJARCZUK N A

(IBM T.J. Watson Res. Center, New York)

About IBM T.J. Watson Res. Center, New York


Material：
Applied Physics Letters  (Appl Phys Lett)

About Applied Physics Letters


Volume： 72  Issue： 4  Page： 415-417  Publication year： Jan. 26, 1998 
JST Material Number： H0613A  ISSN： 0003-6951  CODEN： APPLAB  Document type： Article
Article type： 短報  Country of issue： United States (USA)  Language： ENGLISH (EN)
Thesaurus term：
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Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
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*light emitting diode

About light emitting diode

,...
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JST classification (1)：
JST classification
Category name(code) classified by JST.
Light emitting devices 
(NC03082G)

About Light emitting devices

Terms in the title (5)：
Terms in the title
Keywords automatically extracted from the title.
シリコン

About シリコン

, 
紫外線

About 紫外線

, 
紫色

About 紫色

, 
GaN

About GaN

, 
発光ダイオード

About 発光ダイオード


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