Art

J-GLOBAL ID：200902127912878246   Reference number：95A0574908

Characterization of ZnO/CdS/CuInSe₂ Thin-Film Solar Cells by Deep-Level Transient Spectroscopy.

深準位過渡分光法によるZnO/CdS/CuInSe₂薄膜太陽電池セルの特性評価

Author (2)： KURANOUCHI S (Nagano National Coll. Technol., Nagano, JPN) ,  KONAGAI M (Nagano National Coll. Technol., Nagano, JPN)
Material： Japanese Journal of Applied Physics. Part 1. Regular Papers, Short Notes & Review Papers  (Japanese Journal of Applied Physics. Part 1. Regular Papers, Brief Communications & Review Papers)
Volume： 34  Issue： 5A  Page： 2350-2351  Publication year： May. 1995 
JST Material Number： G0520B  ISSN： 0021-4922  Document type： Article
Article type： 短報  Country of issue： Japan (JPN)  Language： ENGLISH (EN)

Thesaurus term： deep level transient spectroscopy ,...

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JST classification (2)： Electronic structure of impurites and defects  (BM02100I) ,  Lattice defects in semiconductors  (BK12040Q)

Reference (13)：

• KUSHIYA, K. Proc.9th Int, Conf.Ternary and Multinary Compounds, Yokohama, 1993. Jpn.J.Appl.Phys. 1993, 32, 54
• TANDA, M. Jpn.J.Appl.Phys. 1993, 32, 1913
• MOUTINHO, H. R. Proc.23rd IEEE Photovoltaic Spec.Conf.,. 1993, 572
• ABOU-ELFOTOUH, F. A. Sol.Cell. 1991, 30, 151
• ABOU-ELFOTOUH, F. A. Proc.21st IEEE Photovoltaic Spec.Conf. 1990, 541

Terms in the title (6)： 深準位過渡分光法 ,  ZnO ,  CdS ,  薄膜太陽電池 ,  セル ,  特性評価