InGaN-Based Multi-Quantum-Well-Structure Laser Diodes.

NAKAMURA S; SENOH M; NAGAHAMA S; IWASA N; YAMADA T; MATSUSHITA T; KIYOKU H; SUGIMOTO Y

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J-GLOBAL ID：200902128294675793 Reference number：96A0228132

InGaN-Based Multi-Quantum-Well-Structure Laser Diodes.

InGaNに基づいた多重量子井戸構造レーザダイオード

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Material：
Volume： 35 Issue： 1B Page： L74-L76 Publication year： Jan. 15, 1996
JST Material Number： F0599B ISSN： 0021-4922 Document type： Article
Article type：短報 Country of issue： Japan (JPN) Language： ENGLISH (EN)

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Semiconductor lasers

Reference (17)：

STRITE, S. J. Vac. Sci.& Technol. 1992, B10, 1237
MORKOC, H. J. Appl. Phys. 1994, 76, 1363
AMANO, H. Jpn. J. Appl. Phys. 1989, 28, L2112
NAKAMURA, S. Jpn. J. Appl. Phys. 1992, 31, L1457
KHAN, M. A. Appl. Phys. Lett. 1993, 63, 2455

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