Epitaxially grown YMnO<sub>3</sub> film: New candidate for nonvolatile memory devices.

FUJIMURA N; ISHIDA T; YOSHIMURA T; ITO T

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J-GLOBAL ID：200902131318317126 Reference number：96A0764353

Epitaxially grown YMnO₃ film: New candidate for nonvolatile memory devices.

エピタキシャル成長YMnO₃膜不揮発性メモリ素子の新しい候補

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Volume： 69 Issue： 7 Page： 1011-1013 Publication year： Aug. 12, 1996
JST Material Number： H0613A ISSN： 0003-6951 CODEN： APPLAB Document type： Article
Article type：短報 Country of issue： United States (USA) Language： ENGLISH (EN)

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Oxide thin films , Ferroelectrics,antiferroelectrics and ferroelasticity , Materials of solid-state devices

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Epitaxially grown YMnO3 film: New candidate for nonvolatile memory devices.

Epitaxially grown YMnO₃ film: New candidate for nonvolatile memory devices.