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J-GLOBAL ID：200902132002510591
Reference number：97A0694013
Low Temperature Growth of Amorphous and Polycrystalline Silicon Films from a Modified Inductively Coupled Plasma.
改善した誘導結合プラズマからの非晶質および結晶性けい素膜の低温成長
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Author (5)：
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Material：
Volume：
36
Issue：
6A
Page：
3714-3720
Publication year：
Jun. 1997
JST Material Number：
G0520B
ISSN：
0021-4922
Document type：
Article
Article type：
原著論文
Country of issue：
Japan (JPN)
Language：
ENGLISH (EN)
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JST classification (1)：
JST classification
Category name(code) classified by JST.
Semiconductor thin films
Reference (20)：
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1) See for example the review by A. Matsuda, presented at 1996 Int. Conf. Plasma Physics (Nagoya, September 1996); to be published in Plasma Phys. Control. Fusion.
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2) A. Matsuda: J. Non-Cryst. Solids 59/60 (1983) 767.
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3) C. A. Dimitriadis, J. Stoemenos, P. A. Coxon, S. Friligkos, J. Antonopoulos and N. A. Economou: J. Appl. Phys. 73 (1993) 8402
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4) A. Suzuki, Y. Toyoshima, P. J. McElheny and A. Matsuda: Jpn. J. Appl. Phys. 30 (1991) L790.
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5) M. Kawasaki, M. Matsuse, M. Eguchi, M. Miyashita, H. Sakata and H. Hoinuma: Proc. 2nd Int. Conf. Reactive Plasmas (Yokohama, January, 1994) p. 637.
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