The Increase of the Native Oxide Thickness on H-Terminated Si Surfaces by Gaseous Contamination in a Clean Room Atmosphere.

ITOGA T; KOJIMA H; YUGAMI J; OHKURA M

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J-GLOBAL ID：200902132170590010 Reference number：97A0501322

The Increase of the Native Oxide Thickness on H-Terminated Si Surfaces by Gaseous Contamination in a Clean Room Atmosphere.

クリーンルーム雰囲気中のガス状の汚染による水素終端Si表面上の自然酸化物の厚さの増加

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Material：
Volume： 36 Issue： 3B Page： 1578-1581 Publication year： Mar. 1997
JST Material Number： G0520B ISSN： 0021-4922 Document type： Article
Article type：原著論文 Country of issue： Japan (JPN) Language： ENGLISH (EN)

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Materials of solid-state devices , Surface structure of semiconductors

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