A narrow photoluminescence linewidth of 21meV at 1.35μm from strain-reduced InAs quantum dots covered by In<sub>0.2</sub>Ga<sub>0.8</sub>As grown on GaAs substrates.

NISHI K; SAITO H; SUGOU S; LEE J-S

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J-GLOBAL ID：200902132621436754 Reference number：99A0341395

A narrow photoluminescence linewidth of 21meV at 1.35μm from strain-reduced InAs quantum dots covered by In_0.2Ga_0.8As grown on GaAs substrates.

GaAs基板上に成長させたIn_0.2Ga_0.8Asによって被覆された歪誘起InAs量子ドットからの1.35μmにおける21meVの狭い光ルミネセンス線幅

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Volume： 74 Issue： 8 Page： 1111-1113 Publication year： Feb. 22, 1999
JST Material Number： H0613A ISSN： 0003-6951 CODEN： APPLAB Document type： Article
Article type：短報 Country of issue： United States (USA) Language： ENGLISH (EN)

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Luminescence of semiconductors , Semiconductor-semiconductor contacts with Gr.13-15 element compounds

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A narrow photoluminescence linewidth of 21meV at 1.35μm from strain-reduced InAs quantum dots covered by In0.2Ga0.8As grown on GaAs substrates.

A narrow photoluminescence linewidth of 21meV at 1.35μm from strain-reduced InAs quantum dots covered by In_0.2Ga_0.8As grown on GaAs substrates.