Very high breakdown voltage and large transconductance realized on GaN heterojunction field effect transistors.

WU Y-F; KELLER B P; KELLER S; KAPOLNEK D; KOZODOY P; DENBAARS S P; MISHRA U K

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J-GLOBAL ID：200902134432018367 Reference number：96A0798438

Very high breakdown voltage and large transconductance realized on GaN heterojunction field effect transistors.

GaNヘテロ接合電界効果トランジスタで実現した非常に高いブレークダウン電圧と大きい相互コンダクタンス

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Material：
Volume： 69 Issue： 10 Page： 1438-1440 Publication year： Sep. 02, 1996
JST Material Number： H0613A ISSN： 0003-6951 CODEN： APPLAB Document type： Article
Article type：短報 Country of issue： United States (USA) Language： ENGLISH (EN)

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Semiconductor-semiconductor contacts with Gr.13-15 element compounds , Transistors

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