STM-induced H atom desorption from Si(100): isotope effects and site selectivity.

AVOURIS P; WALKUP R E; ROSSI A R; SHEN T-C; ABELN G C; TUCKER J R; LYDING J W

Art

J-GLOBAL ID：200902134617531150 Reference number：96A0719211

STM-induced H atom desorption from Si(100): isotope effects and site selectivity.

Si(100)面からのSTM誘起H原子脱着同位体効果と部位選択性

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Material：
Volume： 257 Issue： 1/2 Page： 148-154 Publication year： Jul. 19, 1996
JST Material Number： B0824A ISSN： 0009-2614 Document type： Article
Article type：短報 Country of issue： Netherlands (NLD) Language： ENGLISH (EN)

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Study of adsorption by physical means

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